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TISP3240F3, TISP3260F3, TISP3290F3,TISP3320F3,TISP3380F3 HIGH-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
*R
TISP3xxxF3 (HV) Overvoltage Protector Series
Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge
DEVICE `3240F3 `3260F3 `3290F3 `3320F3 `3380F3 VDRM V 180 200 220 240 270 V(BO) V 240 260 290 320 380
D Package (Top View)
T NC NC R
1 2 3 4
8 7 6 5
G G G G
NC - No internal connection
SL Package (Top View)
Planar Passivated Junctions Low Off-State Current <10 A Rated for International Surge Wave Shapes
Waveshape 2/10 s 8/20 s 10/160 s 10/700 s 10/560 s 10/1000 s Standard GR-1089-CORE IEC 61000-4-5 FCC Part 68 ITU-T K.20/21 FCC Part 68 FCC Part 68 GR-1089-CORE ITSP A 175 120 60 50 45 35
T G R
1 2 3
MD1XAB
Device Symbol
T R
.......................................UL Recognized Component Description These high-voltage dual bidirectional thyristor protectors are designed to protect ground backed ringing central office, access and customer premise equipment against overvoltages caused by lightning and a.c. power disturbances. Offered in five voltage variants to meet battery and protection requirements, they are guaranteed to suppress and withstand the listed international lightning surges in both polarities. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to switch. The high crowbar holding current prevents d.c. latchup as the current subsides. How To Order
For Standard Termination Finish Order As TISP3xxxF3DR TISP3xxxF3SL For Lead Free Termination Finish Order As TISP3xxxF3DR-S TISP3xxxF3SL-S
SD3XAA
G Terminals T, R and G correspond to the alternative line designators of A, B and C
Device TISP3xxxF3
Packa ge D, Small-o utline SL, Single-in-line
Carrier Tap e And Reeled Tube
Insert xxx value corresponding to protection voltages of 240 through 380
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex MARCH 1994 - REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3xxxF3 (HV) Overvoltage Protector Series
Description (continued) These monolithic protection devices are fabricated in ion implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation. Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted)
Rating `3240F3 `3260F3 `3290F3 `3320F3 `3380F3 Symbol Value 180 200 220 240 270 350 175 90 120 IPPSM 60 55 38 50 50 45 35 D Package SL Package ITSM diT/dt TJ Tstg 4.3 7.1 250 -65 to +150 -65 to +150 A A/s C C A Unit
Repetitive peak off-state voltage, 0 C < TA < 70 C
VDRM
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2) 1/2 (Gas tube differential transient, 1/2 voltage wave shape) 2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 resistor) 8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 10/160 (FCC Part 68, 10/160 voltage wave shape) 4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous) 0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape) 5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single) 5/320 (FCC Part 68, 9/720 voltage wave shape, single) 10/560 (FCC Part 68, 10/560 voltage wave shape) 10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) Non-repetitive peak on-state current, 0 C < TA < 70 C (see Notes 1 and 3) 50 Hz, 1 s
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A Junction temperature Storage temperature range
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section. 2. Initially, the TISP(R) device m ust be in thermal equilibrium with 0 C < TJ <70 C. The surge may be repeated after the TISP(R) device returns to its initial conditions. 3. Above 70 C, derate linearly to zero at 150 C lead temperature.
Electrical Characteristics for R and T Terminal Pair, TA = 25 C (Unless Otherwise Noted)
Parameter Repetitive peak offstate current Off-state current Off-state capacitance Test Conditions VD = 2VDRM, 0 C < TA < 70 C VD = 50 V f = 100 kHz, Vd = 100 mV , VD = 0, Third terminal voltage = -50 V to +50 V (see Notes 4 and 5) Min Typ Max 10 10 D Package SL Package 0.05 0.03 0.15 0.1 Unit A A pF
IDRM ID Coff
NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is connected to the guard terminal of the bridge. 5. Further details on capacitance are given in the Applications Information section.
MARCH 1994 - REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3xxxF3 (HV) Overvoltage Protector Series
Electrical Characteristics for T and G or R and G Terminals, TA = 25 C (Unless Otherwise Noted)
Parameter Repetitive peak offstate current Test Conditions VD = VDRM, 0 C < TA < 70 C `3240F3 `3260F3 `3290F3 `3320F3 `3380F3 `3240F3 `3260F3 `3290F3 `3320F3 `3380F3 0.1 0.15 5 10 95 45 20 Min Typ Max 10 240 260 290 320 380 267 287 317 347 407 0.6 3 Unit A
IDRM
V(BO)
Breakover voltage
dv/dt = 250 V/ms, RSOURCE = 300
V
V(BO)
Impulse breakover voltage
dv/dt 1000 V/s, Linear voltage ramp, Maximum ramp value = 500 V RSOURCE = 50 dv/dt = 250 V/ms, RSOURCE = 300 IT = 5 A, tW = 100 s IT = 5 A, di/dt = -/+30 mA/ms Linear voltage ramp, Maximum ramp value < 0.85VDRM VD = 50 V f = 1 MHz, Vd = 0.1 V r.m.s., VD = 0 f = 1 MHz, Vd = 0.1 V r.m.s., VD = -5 V f = 1 MHz, Vd = 0.1 V r.m.s., VD = -50 V (see Notes 5 and 6)
V
I(BO) VT IH dv/dt ID Coff
Breakover current On-state voltage Holding current Critical rate of rise of off-state voltage Off-state current
A V A kV/s A
Off-state capacitance
57 26 11
pF
NOTES: 6 These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is connected to the guard terminal of the bridge. 7. Further details on capacitance are given in the Applications Information section.
Thermal Characteristics
Parameter RJA Junction to free air thermal resistance Test Conditions Ptot = 0.8 W, TA = 25 C 5 cm2, FR4 PCB D Package SL Package Min Typ Max 160 135 C/W Unit
MARCH 1994 - REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3xxxF3 (HV) Overvoltage Protector Series
Parameter Measurement Information
+i ITSP Quadrant I Switching Characteristic
ITSM IT VT IH V(BR)M -v I(BR) V(BR) I(BO) IH VT IT ITSM Quadrant III Switching Characteristic ITSP -i
PMXXAA
V(BO)
I(BO) IDRM V(BR) I(BR) VDRM V(BR)M +v
VDRM IDRM
VD
ID ID VD
V(BO)
Figure 1. Voltage-Current Characteristics for any Terminal Pair
MARCH 1994 - REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3xxxF3 (HV) Overvoltage Protector Series
Typical Characteristics - R and G or T and G Terminals
OFF-STATE CURRENT vs JUNCTION TEMPERATURE NORMALIZED BREAKDOWN VOLTAGES vs JUNCTION TEMPERATURE TC3HAI
100
TC3HAF
1.2 10 Normalized Breakdown Voltages
V(BO)
1 VD = 50 V 0.1 VD = -50 V 0.01
1.1
V(BR)M
1.0 V(BR) Normalized to V(BR) I(BR) = 100 A and 25 C Positive Polarity
0.001 -25 0 25 50 75 100 125 150 TJ - Junction Temperature - C
0.9 -25 0 25 50 75 100 125 150 TJ - Junction Temperature - C
Figure 2.
Figure 3.
NORMALIZED BREAKDOWN VOLTAGES vs JUNCTION TEMPERATURE TC3HAJ
100
OFF-STATE CURRENT vs ON-STATE VOLTAGE
TC3HAL
1.2 Normalized Breakdown Voltages V(BO)
1.1
V(BR)M
IT - On-State Current - A
10
1.0 V(BR) Normalized to V(BR) I(BR) = 100 A and 25 C Negative Polarity 0.9 -25 0 25 50 75 100 125 150 TJ - Junction Temperature - C
150 C
25 C -40 C
1 1 2 3 4 5 6 7 8 9 10 VT - On-State Voltage - V
Figure 4.
Figure 5.
MARCH 1994 - REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3xxxF3 (HV) Overvoltage Protector Series
Typical Characteristics - R and G or T and G Terminals
HOLDING CURRENT & BREAKDOWN CURRENT vs TC3HAH JUNCTION TEMPERATURE NORMALIZED BREAKOVER VOLTAGES vs JUNCTION TEMPERATURE TC3HAB
IH, I(BO) - Holding Current, Breakover Current - A
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3
1.3
I(BO)
Normalized Breakover Voltage
1.2
IH 0.2
1.1 Positive
0.1 -25 0 25 50 75 100 125 150 TJ - Junction Temperature - C
Negative 1.0 0*001 0*01 0*1 1 10 100
di/dt - Rate of Rise of Principle Current - A/s
Figure 6.
Figure 7.
OFF-STATE CAPACITANCE vs TERMINAL VOLTAGE
100
TC3HAE
OFF-STATE CAPACITANCE vs JUNCTION TEMPERATURE
500
TC3HAD
Off-State Capacitance - pF
Off-State Capacitance - pF
100
Positive Bias
Terminal Bias = 0 Terminal Bias = 50 V 10
Negative Bias
Terminal Bias = -50 V
10 0*1
1 1 Terminal Voltage - V 10 50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature - C
Figure 8.
Figure 9.
MARCH 1994 - REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3xxxF3 (HV) Overvoltage Protector Series
Typical Characteristics - R and G or T and G Terminals
SURGE CURRENT vs DECAY TIME
1000
TC3HAA
Maximum Surge Current - A
100
10 2 10 100 Decay Time - s 1000
Figure 10.
MARCH 1994 - REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3xxxF3 (HV) Overvoltage Protector Series
Typical Characteristics - R and T Terminals
OFF-STATE CURRENT vs JUNCTION TEMPERATURE NORMALIZED BREAKDOWN VOLTAGES vs JUNCTION TEMPERATURE TC3HAK
100
TC3HAG
VD = 50 V 1.2 10 ID - Off-State Current - A Normalized Breakdown Voltages V(BO)
1
1.1
V(BR)M
0*1
1.0 V(BR) Normalized to V(BR) I(BR) = 100 A and 25 C Both Polarities
0*01
0*001 -25 0 25 50 75 100 125 150 TJ - Junction Temperature - C
0.9 -25 0 25 50 75 100 125 150 TJ - Junction Temperature - C
Figure 11.
Figure 12.
1.3
NORMALIZED BREAKOVER VOLTAGES vs RATE OF RISE OF PRINCIPLE CURRENT
TC3HAC
100 90 80 70 60 Off-State Capacitance - fF
OFF-STATE CAPACITANCE vs TERMINAL VOLTAGE
TC3XAA
Normalized Breakover Voltage
D Package
1.2
50 40 SL Package 30
1.1
20
Both Voltage Polarities
1.0 0*001
0*01
0*1
1
10
100
10 0*1
1 Terminal Voltage - V
10
50
di/dt - Rate of Rise of Principle Current - A/s
Figure 13.
Figure 14.
MARCH 1994 - REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3xxxF3 (HV) Overvoltage Protector Series
Thermal Information
MAXIMUM NON-RECURRING 50 Hz CURRENT vs CURRENT DURATION TI3HAA
ITRMS - Maximum Non-Recurrent 50 Hz Current - A
THERMAL RESPONSE
ZJA - Transient Thermal Impedance - C/W
TI3MAA
VGEN = 350 Vrms RGEN = 20 to 250 10 SL Package
100
D Package
10
SL Package
D Package 1 0.1
1
10
100
1000
1 0*0001 0*001
0*01
0*1
1
10
100
1000
t - Current Duration - s
t - Power Pulse Duration - s
Figure 15.
Figure 16.
MARCH 1994 - REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3xxxF3 (HV) Overvoltage Protector Series
APPLICATIONS INFORMATION Electrical Characteristics The electrical characteristics of a TISP(R) device are strongly dependent on junction temperature, TJ. Hence, a characteristic value will depend on the junction temperature at the instant of measurement. The values given in this data sheet were measured on commercial testers, which generally minimize the temperature rise caused by testing. Application values may be calculated from the parameters' temperature coefficient, the power dissipated and the thermal response curve, Z (see M. J. Maytum, "Transient Suppressor Dynamic Parameters." TI Technical Journal, vol. 6, No. 4, pp. 63-70, July-August 1989). Lightning Surge Wave Shape Notation Most lightning tests, used for equipment verification, specify a unidirectional sawtooth waveform which has an exponential rise and an exponential decay. Wave shapes are classified in terms of peak amplitude (voltage or current), rise time and a decay time to 50 % of the maximum amplitude. The notation used for the wave shape is amplitude, rise time/decay time. A 50 A, 5/310 s wave shape would have a peak current value of 50 A, a rise time of 5 s and a decay time of 310 s. The TISP(R) surge current graph comprehends the wave shapes of commonly used surges. Generators There are three categories of surge generator type, single wave shape, combination wave shape and circuit defined. Single wave shape generators have essentially the same wave shape for the open circuit voltage and short circuit current (e.g. 10/1000 s open circuit voltage and short circuit current). Combination generators have two wave shapes, one for the open circuit voltage and the other for the short circuit current (e.g. 1.2/50 s open circuit voltage and 8/20 s short circuit current). Circuit specified generators usually equate to a combination generator, although typically only the open circuit voltage waveshape is referenced (e.g. a 10/700 s open circuit voltage generator typically produces a 5/310 s short circuit current). If the combination or circuit defined generators operate into a finite resistance, the wave shape produced is intermediate between the open circuit and short circuit values. Current Rating When the TISP(R) device switches into the on-state it has a very low impedance. As a result, although the surge wave shape may be defined in terms of open circuit voltage, it is the current wave shape that must be used to assess the required TISP(R) surge capability. As an example, the ITU-T K.21 1.5 kV, 10/700 s open circuit voltage surge is changed to a 38 A, 5/310 s current waveshape when driving into a short circuit. Thus, the TISP(R) surge current capability, when directly connected to the generator, will be found for the ITU-T K.21 waveform at 310 s on the surge graph and not 700 s. Some common short circuit equivalents are tabulated below:
Standard Open Circuit Voltage Short Circuit Current ITU-T K.21 1.5 kV, 10/700 s 37.5 A, 5/310 s ITU-T K.20 1 kV, 10/700 s 25 A, 5/310 s IEC 61000-4-5, combination wave generator 1.0 kV, 1.2/50 s 500 A, 8/20 s Telcordia GR-1089-CORE 1.0 kV, 10/1000 s 100 A, 10/1000 s Telcordia GR-1089-CORE 2.5 kV, 2/10 s 500 A, 2/10 s FCC Part 68, Type A 1.5 kV, <10/>160 s 200 A,<10/>160 s FCC Part 68,Type A 800 V, <10/>560 s 100 A,<10/>160 s FCC Part 68, Type B 1.5 kV, 9/720 s 37.5 A, 5/320 s
Any series resistance in the protected equipment will reduce the peak circuit current to less than the generators' short circuit value. A 1 kV open circuit voltage, 100 A short circuit current generator has an effective output impedance of 10 (1000/100). If the equipment has a series resistance of 25 , then the surge current requirement of the TISP(R) device becomes 29 A (1000/35) and not 100 A.
MARCH 1994 - REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3xxxF3 (HV) Overvoltage Protector Series
APPLICATIONS INFORMATION Protection Voltage The protection voltage, (V(BO)), increases under lightning surge conditions due to thyristor regeneration. This increase is dependent on the rate of current rise, di/dt, when the TISP(R) device is clamping the voltage in its breakdown region. The V(BO) value under surge conditions can be estimated by multiplying the 50 Hz rate V(BO) (250 V/ms) value by the normalized increase at the surge's di/dt (Figure 7 ). An estimate of the di/dt can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance. As an example, the ITU-T K.21 1.5 kV, 10/700 s surge has an average dv/dt of 150 V/s, but, as the rise is exponential, the initial dv/dt is higher, being in the region of 450 V/s. The instantaneous generator output resistance is 25 . If the equipment has an additional series resistance of 20 , the total series resistance becomes 45 . The maximum di/dt then can be estimated as 450/45 = 10 A/s. In practice, the measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope resistance of the TISP(R) breakdown region.
Capacitance Off-state Capacitance The off-state capacitance of a TISP(R) device is sensitive to junction temperature, TJ, and the bias voltage, comprising of the d.c. voltage, VD, and the a.c. voltage, Vd. All the capacitance values in this data sheet are measured with an a.c. voltage of 100 mV. The typical 25 C variation of capacitance value with a.c. bias is shown in Figure 17. When VD >> Vd, the capacitance value is independent on the value of Vd. The capacitance is essentially constant over the range of normal telecommunication frequencies.
NORMALIZED CAPACITANCE vs RMS AC TEST VOLTAGE
1.05
AIXXAA
1.00 Normalized Capacitance
0.95
0.90
0.85
0.80 Normalized to V d = 100 mV DC Bias, VD = 0 0.70 1 10 100 1000 Vd - RMS AC Test Voltage - mV
0.75
Figure 17.
MARCH 1994 - REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3xxxF3 (HV) Overvoltage Protector Series
APPLICATIONS INFORMATION Longitudinal Balance Figure 18 shows a three terminal TISP(R) device with its equivalent "delta" capacitance. Each capacitance, CTG, CRG and CTR, is the true terminal pair capacitance measured with a three terminal or guarded capacitance bridge. If wire R is biased at a larger potential than wire T, then CTG >CRG. Capacitance CTG is equivalent to a capacitance of CRG in parallel with the capacitive difference of (CTG -CRG). The line capacitive unbalance is due to (CTG -CRG) and the capacitance shunting the line is CTR +CRG/2. All capacitance measurements in this data sheet are three terminal guarded to allow the designer to accurately assess capacitive unbalance effects. Simple two terminal capacitance meters (unguarded third terminal) give false readings as the shunt capacitance via the third terminal is included.
T T (CTG -CRG ) CTG G CTR CRG R CTG > CRG R Equivalent Unbalance CRG
AIXXAB
CRG Equipment G CTR Equipment
Figure 18.
"TISP" is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. "Bourns" is a registered trademark of Bourns, Inc. in the U.S. and other countries. MARCH 1994 - REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.

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